S5566B Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – GENERAL PURPOSE RECTIFIER APPLICATIONS

S5566B/G/J/N
PRV : 100 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
SILICON RECTIFIER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 50 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL S5566B S5566G S5566J S5566N UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
100
400
600
1000
V
Maximum RMS voltage
VRMS
70
280
420
700
V
Maximum DC Blocking Voltage
VDC
100
400
600
1000
V
Maximum Average Forward Current
IF(AV)
1.0
A
Maximum Peak Forward Surge Current Single half sine wave
(50Hz)
(60Hz)
(50Hz)
(60Hz)
superimposed on rated load (JEDEC Method)
IFSM
45
49
30
33
A
Maximum Forward Voltage at IF = 1.0 A
VF
1.2
V
Maximum Repetitive Peak Reverse Current
IRRM
10
µA
Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Page 1 of 2
Rev. 01 : April 2, 2002