S5277B Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – General Purposer Rectifier Applications

Certificate : TH97/10561QM
Certificate : TW00/17276EM
S5277B/G/J/N
PRV : 100 - 1000 Volts
Io : 1.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
SILICON RECTIFIER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.161 (4.1)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Average Forward Current
Maximum Peak One Cycle Surge Forward Current
(Non-Repetitive)
Peak Forward Voltage at I_F = 1.0 A
Repetitive Peak Reverse Current
Thermal Resistance (Junction to Ambient)
Junction Temperature Range
Storage Temperature Range
SYMBOL S5277B S5277G S5277J S5277N UNIT
V_RRM
I_F(AV)
I_FSM
V_F
I_RRM
R_{th (j-a)}
T_J
T_STG
100
(50Hz)
50
400
600
1.0
(60Hz) (50Hz)
55
30
1.2
10
120
- 40 to + 150
- 40 to + 150
1000
(60Hz)
33
V
A
A
V
µA
°C/W
°C
°C
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Rev. 00 : May 30, 2007