S1ZB20_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – MINI-BRIDGE RECTIFIERS

S1ZB20 - S1ZB80
PRV : 200 - 800 Volts
Io : 0.8 Amperes
MINI-BRIDGE RECTIFIERS
0.029(0.74)
0.017(0.43)
MBS
0.023 min.
(0.58 min.)
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated Lead solderable per
MIL-STD-202, Method 208
* Polarity : Polarity symbols marked on body
* Mounting position : Any
* Weight : 0.22 gram
0.161(4.10)
0.144(3.65)
~
~
0.105(2.67)
0.095(2.41)
0.195(4.95)
0.179(4.55)
0.272(6.90)
0.252(6.40)
0.030 min.
(0.76 min.)
0.205(5.21)
0.195(4.95)
0.106(2.70)
0.094(2.40)
0.0075(0.19)
0.0065(0.16)
0.114(2.90)
0.094(2.40)
0.038(0.96)
0.019(0.48)
0.272 max.
(6.91 max.)
0.105(2.67)
0.095(2.41)
0.049(1.24)
0.039(0.99)
0.016(0.41)
0.006(0.15)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
Maximum Peak Forward Surge Current,
Non-Repititive 1 Cycle Peak Value
Current Squared Time at 1ms ≤ t < 10 ms.
Maximum Forward Voltage per Diode at IF = 0.4 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Thermal Resistance, Junction to Lead
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IF(AV)
IFSM
I²t
VF
IR
RθJL
TJ
TSTG
S1ZB20
S1ZB60
S1ZB80
200
600
800
140
420
560
200
600
800
0.5 (on glass-epoxy substrate)
0.8 (on aliminum substrate)
30
4.5
1.05
10
20
- 40 to + 150
- 40 to + 150
UNIT
V
V
V
A
A
A²S
V
µA
°C/W
°C
°C
Page 1 of 2
Rev. 02 : March 24, 2005