RM10_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON RECTIFIER DIODES

RM10 - RM10Z
PRV : 200 - 800 Volts
Io : 1.2 - 1.5 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
SILICON RECTIFIER DIODES
D2
0.161 (4.10)
0.154 (3.90)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.20)
0.268 (6.84)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 70 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.5 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Typical Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
RM10Z
200
140
200
IF
1.5
RM10
400
280
400
RM10A
600
420
600
1.2
RM10B
800
560
800
UNIT
V
V
V
A
IFSM
120
VF
IR
IR(H)
CJ
RθJA
TJ
TSTG
150
0.91
10
50
30
50
- 65 to + 175
- 65 to + 175
A
V
µA
µA
pF
°C/W
°C
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
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Rev. 02 : March 25, 2005