RH1 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY RECTIFIER DIODES

RH1 - RH1C
PRV : 400 - 1000 Volts
Io : 0.6 Ampere
FAST RECOVERY
RECTIFIER DIODES
D2
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.161 (4.1)
0.154 (3.9)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Peak Reverse Voltage
Maximum Peak Reverse Surge Voltage
Maximum Average Forward Current ,Ta = 50°C
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sine wave, Single Shot )
Maximum Forward Voltage at IF = 0.6 A
Maximum Reverse Current at VR = VRM Ta = 25 °C
Maximum Reverse Current at VR = VRM Ta = 150 °C
Maximum Reverse Recovery Time (Note 1)
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRSM
IF(AV)
RH1
400
450
RH1A RH1B RH1C
600
800 1000
650
850 1050
0.6
UNIT
V
V
A
IFSM
VF
IR
IR(H)
Trr
TJ
TSTG
35
A
1.3
V
5.0
µA
70
µA
4.0
µs
- 40 to + 150
°C
- 40 to + 150
°C
Note :
( 1 ) Reverse Recovery Test Conditions : IF = 10 mA, IRP = 10 mA.
Page 1 of 2
Rev. 02 : March 25, 2005