RG2_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – ULTRA FAST RECOVERY RECTIFIER DIODES

RG2 - RG2Z
ULTRA FAST RECOVERY
RECTIFIER DIODES
PRV : 200 - 400 Volts
D2
Io : 1.2 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.161 (4.1)
0.154 (3.9)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.21)
0.268 (6.81)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Peak Reverse Voltage
Maximum Peak Reverse Surge Voltage
Maximum Average Forward Current Ta = 60 °C
Maximum Peak Forward Surge Current
(50 Hz, Half-cycle, Sine wave, Single Shot)
Maximum Forward Voltage at IF = 1.5A
Maximum Reverse Current at VR = VRM Ta = 25 °C
Maximum Reverse Current at VR = VRM Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRM
VRSM
IF(AV)
IFSM
VF
IR
IR(H)
Trr
TJ
TSTG
RG2Z
200
200
1.2
RG2
400
400
50
1.5
1.8
0.5
2.5
100
- 40 to + 150
- 40 to + 150
UNIT
V
V
A
A
V
mA
mA
ns
°C
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 100 mA, IRP = 100 mA.
Page 1 of 2
Rev. 03 :September 7, 2005