RG10_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SUPER FAST RECTIFIER DIODES

RG10 - RG10Y
PRV : 70 - 600 Volts
Io : 1.0 - 1.5 Amperes
SUPER FAST
RECTIFIER DIODES
D2
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Super fast recovery time
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.161 (4.1)
0.154 (3.9)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length
Ta = 55 °C
Maximum Peak Forward Surge Current,
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 A.
Maximum DC Reverse Current Ta = 25 °C
at Rated DC Blocking Voltage Ta = 100 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Junction Capacitance ( Note 2 )
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
IR(H)
Trr
CJ
TJ
TSTG
RG10Y
70
49
70
1.5
1.1
RG10
400
280
400
1.2
50
1.8
5
50
35
50
- 65 to + 150
- 65 to + 150
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
RG10A
600
420
600
1.0
2.0
UNIT
V
V
V
A
A
V
µA
µA
ns
pf
°C
°C
Rev. 02 : March 25, 2005