RD20E Datasheet, PDF (1/4 Pages) EIC discrete Semiconductors – SILICON ZENER DIODES

RD2.0E ~ RD39E
V_Z : 2.0 - 39 Volts
P_D : 500 mW
FEATURES :
* Complete 2.0 to 39 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13g
SILICON ZENER DIODES
DO - 35
0.079(2.0 )max.
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
Power Dissipation
Forward Current
Junction Temperature Range
Storage Temperature Range
Symbol
P_D
I_F
T_j
T_s
Value
500
200
- 55 to + 175
- 55 to + 175
Unit
mW
mA
°C
°C
Page 1 of 4
Derating Curve
700
600
500
400
300
200
100
0
0
25 50 75 100 125 150 175 200
Ambient Temperture , Ta (°C)
Rev. 02 : March 25, 2005