RBV600 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

RBV600 - RBV610 SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 6.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
RBV25
C3
30 ± 0.3
3.9 ± 0.2
4.9 ± 0.2
∅ 3.2 ± 0.1
+ ~~
1.0 ± 0.1
10 7.5 7.5
±0.2 ±0.2±^0.2
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
RBV
SYMBOL ₆₀₀
RBV
601
RBV
602
RBV
604
RBV
606
RBV
608
RBV
610
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS
35
70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC
50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55°C
IF(AV)
6.0
Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
IFSM
Current Squared Time at t < 8.3 ms.
I²t
200
Amps.
64
A²S
Maximum Forward Voltage per Diode at IF = 3.0 Amps. VF
1.0
Volts
Maximum DC Reverse Current
Ta = 25 °C
IR
10
µA
at Rated DC Blocking Voltage
Ta = 100 °C
IR(H)
200
µA
Typical Thermal Resistance (Note 1)
RθJC
8.0
°C/W
Operating Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Notes : 1. Thermal Resistance from junction to case w ith units mounted on a 2.6"x1.4"x0.06" THK (6.5cm.x3.5cm.x0.15cm.) Al. Plate. Heatsink.
UPDATE : MARCH 6, 2000