RBV401 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

RBV401 - RBV406
PRV : 100 - 600 Volts
Io : 4.0 Amperes
SILICON BRIDGE RECTIFIERS
RBV4
0.150 (3.8)
0.134 (3.4)
C3
0.996 (25.3)
0.189 (4.8)
0.972 (24.7)
0.173 (4.4)
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams
+~~
0.303 (7.7)
0.287 (7.3)
0.075 (1.9)
0.060 (1.5)
0.043 (1.1)
0.035 (0.9)
0.114 (2.9)
0.098 (2.5)
0.032 (0.8)
0.043 (1.1)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Rectified Current Tc=50°C
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sinwave, Single Shot )
Maximum Forward Voltage per Diode at IF = 2.0 A
Maximum Reverse Current at Reverse Voltage
Maximum Reverse Current at Reverse Voltage Ta = 100 °C
Thermal Resistance, Junction to Case
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL RBV401 RBV402 RBV404 RBV406 UNIT
VRRM
100
200
400
600
V
VR
100
200
400
600
V
IF(AV)
4.0
A
IFSM
80
A
VF
IR
IR(H)
RθJC
TJ
TSTG
1.05
1.1
10
100
5.0
- 40 to + 150
- 40 to + 150
V
µA
µA
°C/W
°C
°C
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Rev. 03 : September 9, 2005