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RBV2500D_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS
RBV2500D - RBV2510D SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 25 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
RBV25
C3
30 ± 0.3
3.9 ± 0.2
4.9 ± 0.2
∅ 3.2 ± 0.1
+ ~~
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 8.17 grams ( Approximaly )
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 25 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL RBV RBV RBV RBV RBV RBV RBV
2500D 2501D 2502D 2504D 2506D 2508D 2510D
UNIT
VRRM
50 100 200 400 600 800 1000 V
VRMS
35
70 140 280 420 560 700
V
VDC
50 100 200 400 600 800 1000 V
IF(AV)
25
A
IFSM
400
A
I2t
VF
IR
IR(H)
RθJC
TJ
TSTG
375
1.1
10
200
1.2
- 40 to + 150
- 40 to + 150
A2S
V
µA
µA
°C/W
°C
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
Page 1 of 2
Rev. 03 : September 9, 2005