RBV2500D Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

RBV2500D - RBV2510D SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 25 Amperes
RBV25
3.9 ± 0.2
C3
30 ± 0.3
4.9 ± 0.2
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 V DC
* Ideal for printed circuit board
* Very good heat dissipation
∅ 3.2 ± 0.1
+ ~~
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 ^°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL
RBV
2500D
RBV RBV RBV
2501D 2502D 2504D
RBV RBV RBV
2506D 2508D 2510D
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
V RMS
35
70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC
50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55^°C
IF(AV)
25
Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
IFSM
Current Squared Time at t < 8.3 ms.
I² t
400
Amps.
375
A²S
Maximum Forward Voltage per Diode at IF = 25 Amps.
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 ^°C
Typical Thermal Resistance (Note 1)
VF
IR
IR(H)
RθJC
1.1
Volts
10
µA
200
µ_A
1.2
°C/W
Operating Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Notes :
1. Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate
UPDATE : NOVEMBER 1,1998