R2K Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – AVALANCHE DIODE

R2K
V_RM : 150 Volts
I_ZSM : 1.0 Amp. ( 100 µs )
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
Certificate TH97/10561QM
Certificate TW00/17276EM
AVALANCHE DIODE
D2
0.161 (4.1)
0.154 (3.9)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.2)
0.268 (6.8)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
Single phase, half wave, 60 Hz, resistive or inductive load
For capacitive load, derate current by 20%
RATING
Maximum Peak Reverse Voltage
Maximum DC Blocking Reverse Voltage
Minimum Avalanche Breakdown Voltage at I_Z = 1mA
Maximum Avalanche Breakdown Voltage at I_Z = 1mA
Maximum Allowable Avalanche Current (Note 1)
Maximum Reverse Current at V_RM Ta = 25 °C
Maximum Reverse Current at V_RM Ta = 100 °C
Typical Avalanche Voltage Temperature Coefficient at Iz = 1mA
Junction Temperature Range
Storage Temperature Range
SYMBOL
V_RM
V_DC
V_BR(min)
V_BR(max)
I_ZSM
I_R
I_R(H)
T_J
T_STG
VALUE
150
150
170
200
1.0
10
50
+0.15
- 40 to + 130
- 40 to + 150
Note : (1) Non-Repetitive Current Pulse width 100 µs Square wave, one shot.
UNIT
V
V
V
V
A
µA
µA
V/°C
°C
°C
Page 1 of 2
Rev. 03 : June 10, 2006