P800A Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON RECTIFIER DIODES

P800A - P800K
SILICON RECTIFIER DIODES
PRV : 50 - 800 Volts
D6
Io : 8.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
0.360 (9.1)
0.340 (8.6)
1.00 (25.4)
MIN.
0.360 (9.1)
0.340 (8.6)
MECHANICAL DATA :
* Case : Void-free molded plastic body
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 2.1 grams
0.052 (1.32)
0.048 (1.22)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
0.375"(9.5mm) Lead Length Ta = 50 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed on
rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at I F = 8 A
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical junction capacitance at 4.0V, 1MHz
Typical Thermal Resistance (1)
Junction Temperature Range
Storage Temperature Range
SYMBOL P800A P800B P800D P800G P800J P800K UNIT
V RRM
VRMS
V DC
50 100 200 400 600 800
V
35
70 140 280 420 560
V
50 100 200 400 600 800
V
IF(AV)
8.0
A
IFSM
VF
IR
IR(H)
CJ
RθJA
TJ
T STG
400
1.0
5.0
1.0
150
20
- 50 to + 150
- 50 to + 150
A
V
µA
mA
pF
°C/W
°C
°C
Note :
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length,
P.C.B. mounted with 1.1” x 1.1” (30 x 30mm) copper pads
Page 1 of 2
Rev. 02 : March 25, 2005