NS8AT Datasheet, PDF (1/2 Pages) General Semiconductor – GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER

NS8AT - NS8MT
PRV : 50 - 1000 Volts
Io : 8.0 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Glass passivated chip junction
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Epoxy, Molded
* Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
* Weight : 1.9 grams (Approximately)
Glass Passivated General Purpose
TO-220AB
0.154(3.91)DIA.
0.148(3.74)
0.113(2.87)
0.103(2.62)
0.415(10.54)MAX.
0.055(1.39)
0.045(1.14)
0.145(3.68)
0.135(3.43)
0.635(16.13)
0.625(15.87)
PIN 1
12 3
0.350(8.89)
0.330(8.39)
0.160(4.06)
0.140(3.56)
PIN 3
PIN 2
CASE
0.205(520)
0.195(4.95)
0.037(0.94)
0.027(0.68)
0.105(2.67)
0.095(2.41)
0.185(4.70)
0.175(4.44)
0.603(15.32)
0.573(14.55)
0.560(14.22)
0.530(13.46)
0.022(0.56)
0.014(0.36)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Working Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current, Tc = 150°C
Maximum Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at I F = 8 A
Maximum Reverse Current at Tc = 25 °C
Rated DC Blocking Voltage
Tc = 150 °C
Maximum Thermal Resistance, Junction to Case
SYMBOL
NS8
AT
V RRM
50
V RW M
35
V DC
50
I F(AV)
IFSM
VF
IR
IR(H)
R θJC
NS8
BT
100
70
100
NS8
DT
200
140
200
NS8
GT
400
280
400
8.0
125
1.1
10
100
3.0
NS8
JT
600
420
600
NS8
KT
800
560
800
NS8
MT
1000
700
1000
Junction Temperature Range
Storage Temperature Range
TJ
TSTG
- 55 to + 150
- 55 to + 150
UNIT
V
V
V
A
A
V
µA
µA
°C/W
°C
°C
Page 1 of 2
Rev. 02 : March 25, 2005