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MZ85C3V0 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON ZENER DIODES
Certificate : TH97/10561QM
Certificate : TW00/17276EM
MZ85C3V0~MZ85C200
SILICON ZENER DIODES
VZ : 3.0 - 200 Volts
PD : 1.3 Watts
M1A
FEATURES :
* Complete Voltage Range 3.0 to 200 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA :
* Case : M1A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram (approximately)
0.085(2.16)
0.075(1.91)
0.024(0.60)
0.022(0.55)
1.00 (25.4)
MIN.
0.138(3.51)
0.122(3.10)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified.
Rating
DC Power Dissipation at TL = 50 °C (Note1)
Maximum Forward Voltage at IF = 200 mA
Maximum Thermal Resistance Junction to Ambient Air (Note2)
Junction Temperature Range
Storage Temperature Range
Symbol
PD
VF
RÓ¨JA
TJ
TSTG
Notes :
(1) TL = Lead temperature at 3/8 " (9.5mm) from body
(2) Valid provided that leads are kept at ambient temperature at a distance of 10 mm from case.
Value
1.3
1.2
130
- 65 to + 200
- 65 to + 200
Unit
W
V
K/W
°C
°C
Fig. 1 POWER TEMPERATURE DERATING CURVE
1.5
L = 3/8" (9.5mm)
1.2
0.9
0.6
0.3
Page 1 of 2
0
25 50
75 100 125 150 175 200
TL, LEAD TEMPERATURE (°C)
Rev. 00 : July 4, 2007