MZ55B3V0 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON ZENER DIODES

MZ55B3V0 ~ MZ55B200
V_Z : 3.0 - 200 Volts
P_D : 500 mW
FEATURES :
* Complete 3.0 to 200 Volts
* High surge current capability
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Zener Voltage tolerance is ± 2%
* Pb / RoHS Free
MECHANICAL DATA :
* Case : M1A Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.20 gram (approximately)
Certificate TH97/10561QM
Certificate TW00/17276EM
SILICON ZENER DIODES
M1A
0.085(2.16)
0.075(1.91)
0.024(0.60)
0.022(0.55)
1.00 (25.4)
MIN.
0.138(3.51)
0.122(3.10)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Rating
Power Dissipation (Note1)
Maximum Forward Voltage at I_F =100 mA
Maximum Thermal Resistance Junction to Ambient Air (Note1)
Junction Temperature Range
Storage Temperature Range
Symbol
P_D
V_F
R_Ó¨JA
T_J
T_STG
Value
500
1.0
300
- 65 to + 200
- 65 to + 200
Note : (1) Valid provided that leads at a distance of 3/8” from case are kept at ambient temperature.
Unit
mW
V
°C/W
°C
°C
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Rev. 01 : December 7, 2007