MURF1620CT Datasheet, PDF (1/2 Pages) ON Semiconductor – SWITCHMODE Power Rectifier

MURF1620CT
Dual Ultrafast Plastic Rectifiers
PRV : 200 Volts
Io : 16 Ampere
FEATURES :
* Ideally suited for free wheeling diode power factor
correction applications
* Soft recovery characteristics
* Excellent high temperature switching
* Glass passivated chip junction
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Epoxy, Molded
* Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
* Polarity: As marked
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
ITO-220AB
0.134(3.4)DIA.
0.113(3.0)DIA.
0.112(2.85)
0.100(2.55)
0.406(10.3)MAX.
0.272(6.9)
0.248(6.3)
0.543(13.8)
0.512(13.2)
123
0.161(4.1)Max.
0.055(1.4)Max.
0.185(4.70)Max.
0.124(3.16)Max.
0.603(15.5)
0.573(14.8)
0.110(2.8)
0.098(2.5)
0.100(2.55)
0.035(0.9)Max.
0.030(0.76)Max.
PIN 1
PIN 3
PIN 2
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Tc =25°C unless otherwise specified.)
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current, Tc = 100°C
Maximum Non−repetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
Maximum Instantaneous Forward Voltage per Leg
at IF = 8 A, Tc = 25°C
IF = 8 A, Tc = 150°C
Maximum Instantaneous Reverse Current
(Rated dc Voltage)
Maximum Reverse Recovery Time
(I_F = 0.5A, IR = 1.0A, Irr = 0.25A )
Maximum Thermal Resistance, Junction to Case
Operating storage and temperature range
SYMBOL
VRRM
VRWM
VDC
IF(AV)
IFSM
VF
IR
IR(H)
Trr
RθJC
TJ, TSTG
VALUE
200
200
200
8.0
16 (Total Device)
100
0.975
0.895
5.0 (Tc = 25°C)
250 (Tc = 100°C)
25
4.2
- 65 to + 150
UNIT
V
V
V
A
A
V
µA
µA
ns
°C/W
°C
Page 1 of 2
Rev. 02 : March 25, 2005