MR3230 Datasheet, PDF (1/1 Pages) EIC discrete Semiconductors – AUTOMOTIVE TRANSIENT SUPPRESSOR DIODE

MR3230
VBR : 30 Volts
Io : 32 Amperes
FEATURES :
* Avalanche Voltage 38 to 42 Volts
* High Power capability
* Increased Capacity by Parallel Operation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Polarity : Cathode polarity band
* Mounting position : Any
* Weight : 2.69 grams
AUTOMOTIVE TRANSIENT
SUPPRESSOR DIODE
5° NOM
0.342 (8.69)
0.332 (8.43)
0.246 (6.25)
0.234 (5.94)
0.175 (4.45)
0.165 (4.19)
0.222 (5.64)
0.218 (5.54)
Dimensions in inches and ( millimeter )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Minimum Breakdown Voltage ( IR = 100 mA, Tc = 25°C ) (1)
Maximum Breakdown Voltage ( IR = 100 mA, Tc = 25°C ) (1)
Maximum Average Rectified Forward Current
( Single Phase, Resistive Load, 60 Hz, Tc = 150 °C )
Maximum Repetitive Peak Reverse Surge Current
( Time Constant = 10 ms, Duty Cycle ≤ 1%, Tc = 25 °C )
Maximum Instantaneous Forward Voltage (IF =100 A , Tc = 150 °C) (1)
Maximum Reverse Current ( VR = 30 V, Tc = 25 °C )
Maximum Reverse Current ( VR = 30 V, Tc = 150 °C )
Typical Thermal Resistance Junction to Case
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRWM
VR
VBR(min)
VBR(max)
IF(AV)
IRSM
VF
IR
IR
RθJC
TJ
TSTG
Note : (1) Pulse Test : Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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VALUE
30
30
38
42
32
UNIT
V
V
V
V
A
77
1.1
1.0
500
0.8
- 65 to + 175
- 65 to + 175
A
V
µA
µA
°C/W
°C
°C
Rev. 02 : March 24, 2005