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MBRA120ET3G Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
MBRA120ET3G
PRV : 20 Volts
Io : 1.0 Ampere
FEATURES :
* Highly Stable Oxidation Passivated Junction
* Guardring for Over - Voltage Protection
* Optimized for Low Leakage Current
* Pb / RoHS Free
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIER
SMA
1.3 ± 0.2
1.6 ± 0.25
2.6 ± 0.15
2.3 ± 0.2
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.060 gram (Approximately)
1.6 ± 0.25
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (Ta=25°C)
RATING
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reversr Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current at TC = 125 °C
Maximum Non-Repetitive Peak Surge Current
(Surge Applied at Rate Load Conditions Halfwave,
Single Phase, 60 Hz)
Maximum Instantaneous Forward Voltage (Note 1)
( IF = 1.0 A , TJ = 25°C )
( IF = 2.0 A , TJ = 25°C )
Maximum Instantaneous Reverse Current (Note 1)
( VR = rated VR , TJ = 25 °C )
( VR = rated VR , TJ = 100 °C )
Thermal Resistance Junction to Lead (Note 2)
Thermal ResistanceJunction to Ambient (Note 2)
Storage/Operating Junction Temperature Range
SYMBOL
VRRM
VRWM
VDC
IF(AV)
IFSM
VF
IR
IRH
RθJL
RθJA
TSTG ,TJ
VALUE
20
20
20
1.0
40
0.530
0.595
10
1600
34
138
- 55 to + 150
UNIT
V
V
V
V
A
V
μA
ºC/W
ºC/W
ºC
Notes :
( 1 ) Pulse Test : Pulse Width ≤ 250 μs, Duty Cycle ≤ 2 %.
( 2 ) Mounted on a Pad Size of 5 mm × 5 mm, PC Board FR4 ( 2 pads ).
Page 1 of 2
Rev. 05 : September 23, 2008