LL103A Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Schottky Barrier Diode for general purpose applications

LL103A - LL103C
FEATURES :
• For general purpose applications
• The LL103A, B, C series is a metal-on-silicon
Schottky barrier device which is protected by a
PN junction guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
• Other applications are click suppression, efficient
full wave bridges in telephone subsets, and
blocking diodes in rechargeable low voltage
battery systems.
• These diodes are also available in the DO-35 case with
type designation SD103A, B, C
• Pb / RoHS Free
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
SCHOTTKY BARRIER DIODES
MiniMELF (SOD-80C)
Cathode Mark
φ 0.063 (1.64)
0.055 (1.40)
0.142(3.6)
0.134(3.4)
0.019(0.48)
0.011(0.28)
0.049 (1.25)Min.
Mounting Pad Layout
0.098 (2.50)
Max.
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Repetitive Peak Reverse Voltage
Single Cycle Surge 60 Hz Sine Wave
Power Dissipation (Infinite Heatsink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
Note: (1) Valid provided that electrodes are kept at ambient temperature.
LL103A
LL103B
LL103C
Symbol
V_RRM
I_FSM
PD
R_θJA
T_J
T_S
Value
40
30
20
15
400⁽¹⁾
300⁽¹⁾
125
-55 to + 150
Unit
V
A
mW
°C/W
°C
°C
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Current
Forward Voltage Drop
Diode Capacitance
Reverse Recovery Time
LL103A
LL103B
LL103C
V_R = 30 V
I_R
V_R = 20 V
V_R = 10 V
V_F
I_F = 20mA
I_F = 200mA
Cd
V_R = 0 V, f = 1MHz
Trr
I_F = I_R = 5mA to 200mA
recover to 0.1I_R
Min
Typ
Max
Unit
-
-
5
-
-
5
µA
-
-
5
-
-
0.37
V
-
-
0.6
-
50
-
pF
-
10
-
ns
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Rev. 02 : March 24, 2005