LL101A Datasheet, PDF (1/2 Pages) Semtech Corporation – Silicon Schottky Barrier Diode for general purpose applications

LL101A - LL101C
FEATURES :
• For general purpose applications
• The LL101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN junction
guard ring.
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications.
• This diode is also available in the DO-35 case with
type designation SD101A, B, C
• Pb / RoHS Free
MECHANICAL DATA :
Case: MiniMELF Glass Case (SOD-80C)
Weight: approx. 0.05g
SCHOTTKY BARRIER DIODES
MiniMELF (SOD-80C)
Cathode Mark
φ 0.063 (1.64)
0.055 (1.40)
0.142(3.6)
0.134(3.4)
0.019(0.48)
0.011(0.28)
0.049 (1.25)Min.
Mounting Pad Layout
0.098 (2.50)
Max.
0.079 (2.00)Min.
0.197 (5.00)
REF
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Symbol
Repetitive Peak Reverse Voltage
Maximum Single Cycle Surge 10µs Square Wave
Power Dissipation (Infinite Heatsink)
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage temperature range
LL101A
LL101B
LL101C
V_RRM
I_FSM
PD
R_θJA
T_J
T_S
Note: (1) Valid provided that electrodes are kept at ambient temperature.
Electrical Characteristics (T_J = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Breakdown Voltage
Reverse Current
Forward Voltage Drop
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
LL101A
LL101B
LL101C
V_(BR)R
I_R
V_F
I_R = 10 µA
V_R = 50 V
V_R = 40 V
V_R = 30 V
I_F = 1mA
I_F = 15mA
Reverse Recovery Time
Trr
I_F = I_R = 5mA ,
recover to 0.1I_R
Value
60
50
40
2
400⁽¹⁾
300⁽¹⁾
125⁽¹⁾
-55 to + 150 ⁽¹⁾
Min
Typ
Max
60
-
-
50
-
-
40
-
-
-
-
10
-
-
10
-
-
10
-
-
0.41
-
-
0.40
-
-
0.39
-
-
1.00
-
-
0.95
-
-
0.90
-
-
1.0
Unit
V
A
mW
°C/W
°C
°C
Unit
V
µA
V
ns
Page 1 of 2
Rev. 02 : March 24, 2005