HZS6L Datasheet, PDF (1/3 Pages) EIC discrete Semiconductors – ZENER DIODES

HZS-L Series
P_D : 400 mW
FEATURES :
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA
Case: DO-34 Glass Case
Weight: approx. 0.093g
TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
ZENER DIODES
DO - 34 Glass
0.078 (2.0 )max.
Cathode
Mark
0.017 (0.43)max.
1.00 (25.4)
min.
0.118 (3.0)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25 °C ambient temperature unless otherwise specified
Parameter
Forward Rectifier Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
I_F
P_D
Tj
Tstg
Derating Curve
500
400
L = 5 mm
300
L = 10 mm
200
Value
150
400
200
- 55 to + 175
100
0
0
50
100
150
200
Ambient Temperture, Ta (°C)
Unit
mA
mW
°C
°C
Page 1 of 3
Rev. 04 : December 3, 2008