HZK6A1L Datasheet, PDF (1/3 Pages) EIC discrete Semiconductors – High peak reverse power dissipation

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HZK-L Series
ZENER DIODES
P_D : 400 mW
FEATURES :
* High peak reverse power dissipation
* High reliability
* Low leakage current
* Pb / RoHS Free
MECHANICAL DATA
* Case : MiniMELF Glass Case (SOD-80C)
* Weight : 0.05 gram (approximately)
MiniMELF (SOD-80C)
Cathode Mark
φ 0.063 (1.64)
0.055 (1.40)
0.142(3.6)
0.134(3.4)
0.019(0.48)
0.011(0.28)
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS (Ta=25°C)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
P_D
Tj
Tstg
Value
400
175
- 55 to + 175
Unit
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ta=25°C)
Type
Grade
Zener Voltage
Vz (V)
min.
max.
Test
Current
I_ZT
(mA)
Maximum Dymamic
Resistance
rd @ I_Z
(Ω)
(mA)
A1
5.2
5.5
A2
5.3
5.6
150
A3
5.4
5.7
HZK6L
B1
5.5
5.8
B2
5.6
5.9
0.5
80
0.5
B3
5.7
6.0
C1
5.8
6.1
C2
6.0
6.3
60
C3
6.1
6.4
A1
6.3
6.6
A2
6.4
6.7
A3
6.6
6.9
B1
6.7
7.0
HZK7L
B2
6.9
7.2
0.5
60
0.5
B3
7.0
7.3
C1
7.2
7.6
C2
7.3
7.7
C3
7.5
7.9
* Referent only
Maximum
Reverse Current
I_R @ V_R
(µA)
(V)
Typical Temperature
Coefficient*
γz
Iz
(mV/^oC) ^(mA)
1
2.0
1.0
0.5
1
3.5
2.0
0.5
Page 1 of 3
Rev. 04 : August 9, 2005