HSS102 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SCHOTTKY BARRIER DIODE

HSS102
FEATURES :
• Very Low IR
• Low VF and high efficiency.
• Pb / RoHS Free
MECHANICAL DATA :
Case: DO-34 Glass Case
Weight: approx. 0.11g
SCHOTTKY BARRIER DIODE
DO - 34 Glass
0.063 (1.6 )max.
Cathode
Mark
0.022 (0.55)max.
1.00 (25.4)
min.
0.119 (3.04)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
Maximum Ratings and Thermal Characteristics (Rating at 25 °C ambient temperature unless otherwise specified.)
Parameter
Reverse Voltage
Average Rectified Current
Power Dissipation
Junction Temperature
Storage temperature range
Symbol
V_R
I_o
P_D
T_J
T_stg
Value
70
35
150
125
-65 to + 125
Unit
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Reverse Current
I_R
V_R = 50 V
Reverse Voltage
V_R
I_R = 10 µA
Forward Voltage
Diode Capacitance
Diode Capacitance Deviation
Forward Voltage Deviation
V_F
Cd
∆Cd
∆V_F
I_F = 10 mA
I_F = 20 mA
V_R = 0V, f = 1MHz
V_R = 0V, f = 1MHz
I_F = 20 mA
Min
Typ
Max
Unit
-
-
100
nA
70
-
-
V
-
-
0.50
V
-
-
1.10
V
-
-
2.2
pF
-
-
0.2
pF
-
-
10
mV
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Rev. 02 : March 24, 2005