GS1S Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SURFACE MOUNT

TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
GS1S
PRV : 2500 Volts
Io : 0.2 Ampere
SURFACE MOUNT
HIGH VOLTAGE RECTIFIER
SMA
1.3 ± 0.2
FEATURES :
* Glass passivated junction chip
* Super fast recovery time
* High current capability
* High surge current capability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.060 gram (Approximately)
1.6 ± 0.25
2.6 ± 0.15
2.3 ± 0.2
1.6 ± 0.25
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
Maximum Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at I_F = 0.2 A
Maximum Reverse Current at V_R = 2000 V, Ta = 25 °C
Maximum Reverse Recovery Time ( Note 1 )
Operating Junction and Storage Temperature Range
SYMBOL
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
V_F
I_R
Trr
T_J, T_STG
VALUE
2500
1750
2500
0.2
30
6.0
1.0
35
- 40 to + 150
Note :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
UNIT
V
V
V
A
A
V
μA
ns
°C
Page 1 of 2
Rev. 01 : September 22, 2008