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GNTA Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – GLASS PASSIVATED JUNCTION
Certificate : TH97/10561QM
Certificate : TW00/17276EM
GNTA - GNTM
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
PRV : 50 - 1000 Volts
Io : 2.5 Amperes
FEATURES :
* Glass passivated junction chip
* High current capability
* High reliability
* Low leakage
* Low forward voltage drop
* Pb / RoHS Free
SMB (DO-214AA)
1.1 ± 0.3
2.0 ± 0.1
3.6 ± 0.15
2.3 ± 0.2
0.22 ± 0.07
MECHANICAL DATA :
* Case : SMB Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.1079 gram
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
SYMBOL GNTA GNTB GNTD GNTG GNTJ GNTK GNTM UNIT
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at IF = 2.5 A.
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Operating Junction Temperature Range
Storage Temperature Range
VRRM
VRMS
VDC
IF(AV)
IFSM
VF
IR
IR(H)
CJ
TJ
TSTG
50 100 200 400 600 800 1000 V
35 70 140 280 420 560 700 V
50 100 200 400 600 800 1000 V
2.5
A
150
A
1.1
V
5.0
μA
50
μA
35
pF
- 65 to + 150
°C
- 65 to + 150
°C
Note :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V.
Page 1 of 2
Rev. 00 : May 4, 2007