GNOA Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – GLASS PASSIVATED JUNCTION SILICON SURFACE MOUNT

GNOA - GNOM
PRV : 50 - 1000 Volts
Io : 1.5 Amperes
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
SMA (DO-214AC)
1.1 ± 0.3
1.2 ± 0.2
2.6 ± 0.15
2.1 ± 0.2
0.2 ± 0.07
2.0 ± 0.2
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 75°C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.5 Amps.
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Junction Temperature Range
Storage Temperature Range
SYMBOL GNOA GNOB GNOD GNOE GNOG GNOH GNOJ GNOK GNOM UNIT
VRRM 50 100 200 300 400 500 600 800 1000 V
VRMS
35
70 140 210 280 350 420 560 700
V
VDC 50 100 200 300 400 500 600 800 1000 V
IF(AV)
1.5
A
IFSM
50
A
VF
IR
IR(H)
CJ
TJ
TSTG
1.1
V
5.0
µA
50
µA
30
pF
- 65 to + 150
°C
- 65 to + 150
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
Page 1 of 2
Rev. 01 : Mar 23, 2002