GN3A_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – GLASS PASSIVATED JUNCTION

GN3A - GN3M
PRV : 50 - 1000 Volts
Io : 3.0 Amperes
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SMC Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.21 gram
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
SMC (DO-214AB)
1 .1 ± 0.3
3.0 ± 0.2
5.8 ± 0.15
2.3 ± 0.2 ^{0.2 ± 0.0 7}
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 3.0 Amps.
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Junction Temperature Range
Storage Temperature Range
SYMBOL GN3A
VRRM
50
VRMS
35
VDC
50
IF(AV)
GN3B
100
70
100
GN3D
200
140
200
GN3G
400
280
400
3.0
GN3J
600
420
600
GN3K
800
560
800
GN3M UNIT
1000 V
700 V
1000 V
A
IFSM
150
A
VF
IR
IR(H)
CJ
TJ
TSTG
1.0
V
5.0
µA
50
µA
50
pF
- 65 to + 175
°C
- 65 to + 175
°C
Note :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
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Rev. 02 : March 25, 2005