GN2S Datasheet, PDF (1/1 Pages) EIC discrete Semiconductors – GLASS PASSIVATED JUNCTION

Certificate TH97/10561QM
Certificate TW00/17276EM
GN2S
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
PRV : 700 Volts
Io : 1.25 Amperes
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SMB Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.1079 gram
SMB (DO-214AA)
1.1 ± 0.3
2.0 ± 0.1
3.6 ± 0.15
2.3 ± 0.2
0.22 ± 0.07
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Minimum Average Output Forward Current Ta = 25 °C
Tc = 55 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I _F = 2.0 A, Tc = 25 °C
Maximum DC Reverse Current
Ta = 25 °C
at rated DC Blocking Voltage
Ta = 100 °C
Typical Junction Capacitance (Note1)
Junction Temperature Range
Storage Temperature Range
Note : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
SYMBOL
V_RRM
V_RMS
V_DC
I_O
I_FSM
V_F
I_R
I_R(H)
C_J
T_J
T_STG
VALUE
700
490
700
1.25
3.75
80
1.0
2.0
20
75
- 65 to + 150
- 65 to + 150
UNIT
V
V
V
A
A
V
μA
μA
pF
°C
°C
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Rev. 00 : December 15, 2006