GN1A_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – GLASS PASSIVATED JUNCTION

GN1A - GN13
PRV : 50 - 1300 Volts
Io : 1.0 Ampere
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
GLASS PASSIVATED JUNCTION
SILICON SURFACE MOUNT
SMA (DO-214AC)
1.1 ± 0.3
1.2 ± 0.2
2.6 ± 0.15
2.1 ± 0.2
0.2 ± 0.07
2.0 ± 0.2
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Ta = 75 °C
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 Amp.
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage Ta = 100 °C
Typical Junction Capacitance (Note1)
Junction Temperature Range
Storage Temperature Range
SYMBOL GN1A GN1B GN1D GN1G GN1J GN1K GN1M GN13 UNIT
VRRM 50 100 200 400 600 800 1000 1300 V
VRMS
35
70 140 280 420 560 700 910
V
VDC
50 100 200 400 600 800 1000 1300 V
IF(AV)
1.0
A
IFSM
30
A
VF
IR
IR(H)
CJ
TJ
TSTG
1.0
V
5.0
µA
50
µA
8
pF
- 65 to + 150
°C
- 65 to + 150
°C
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
Page 1 of 2
Rev. 02 : March 25, 2005