GL41Y Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – GLASS PASSIVATED JUNCTION SILICON RECTIFIER

TH97/2478
TH09/2479
IATF 0060636
SGS TH07/1033
GL41Y
PRV : 1600 Volts
Io : 1.0 Ampere
FEATURES :
* Glass passivated junction chip
* High current capability
* High reliability
* Low reverse current
* Pb / RoHS Free
MECHANICAL DATA :
* Case : MELF Glass Case
* Weight : 0.25 g (approximately)
GLASS PASSIVATED JUNCTION
SILICON RECTIFIER
φ 0.102 (2.6)
0.094 (2.4)
MELF
Cathode Mark
0.205(5.2)
0.189(4.8)
0.022(0.55)
0.049 (1.25)Min.
Mounting Pad Layout
0.157 (4.00)
Max.
0.118 (3.00)Min.
0.256 (6.50)
REF
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 1.0 Amp.
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage Ta = 125 °C
Maximum Junction Capacitance (Note1)
Maximum Thermal Resistance (Note2)
Junction Temperature Range
Storage Temperature Range
SYMBOL
V_RRM
V_RMS
V_DC
I_F(AV)
I_FSM
V_F
I_R
I_R(H)
C_J
R_θJA
T_J
T_STG
VALUE
1600
1120
1600
1.0
30
1.2
10
50
8.0
75
- 65 to + 175
- 65 to + 175
Notes : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0VDC
(2) Thermal resistance from Junction to Ambient at 0.24 × 0.24"(6.0 × 6.0 mm) copper pads to each terminal.
UNIT
V
V
V
A
A
V
μA
μA
pF
°C/W
°C
°C
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Rev. 00 : April 24, 2009