GBPC25005 Datasheet, PDF (1/2 Pages) Pan Jit International Inc. – HIGH CURRENT SILICON BRIDGE RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 25 Amperes)

Certificate TH97/10561QM
Certificate TW00/17276EM
GBPC25005 - GBPC2510
PRV : 50 - 1000 Volts
Io : 25 Amperes
FEATURES :
* Glass passivated junction chip
* High surge current capability
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
GLASS PASSIVATED SINGLE-
PHASE BRIDGE RECTIFIERS
BR50
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) ^1.130(28.70)
0.618(15.70) ^1.120(28.40)
0.658(16.70)
0.618(15.70)
0.210(5.30)
0.200(5.10)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
0.252(6.40)
0.248(6.30)
φ0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise noted.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 50 °C ⁽¹⁾
Peak Forward Surge Current Single Sine Wave
Superimposed on Rated Load
Rating for fusing (non-repetitive, 1ms < t < 8.3 ms)
Maximum Instantaneous Forward
Voltage Drop Per Diode
at I_F = 12.5 A
Maximum DC Reverse Current at
Ta = 25 °C
Rated DC Blocking Voltage Per Diode Ta = 125 °C
Typical Junction Capacitance Per Diode (at 4 V, 1MHz)
Typical Thermal Resistance form Junction to Case
Operating Junction and Storage Temperature Range
SYMBOL ^{GBPC GBPC GBPC GBPC GBPC GBPC GBPC}
25005 2501 2502 2504 2506 2508 2510
V_RRM
50 100 200 400 600 800 1000
V_RMS
35
70 140 280 420 560 700
V_DC
50 100 200 400 600 800 1000
I_F(AV)
25
UNIT
V
V
V
A
I_FSM
300
A
I²t
375
A²sec
V_F
1.1
V
I_R
I_R(H)
C_J
R_Ó¨JC
T_J, T_STG
5
500
300
1.9
- 55 to + 150
μA
μA
pF
°C/W
°C
Note : (1) Unit mounted on 5 x 6 x 4.9" AL, Finned Plate.
Page 1 of 2
Rev. 00 : June 25, 2007