GBJ2500 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

GBJ2500 - GBJ2510
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 25 Amperes
RBV25
3.9 ± 0.2
C3
30 ± 0.3
4.9 ± 0.2
FEATURES :
* Glass Passivated Die Construction
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength of 2000 VDC
* High current capability
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 8.17 grams ( Approximaly )
∅ 3.2 ± 0.1
+ ~~
1.0 ± 0.1
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.7 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 100°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF = 12.5 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 °C
Ta = 100 °C
Thermal Resistance, Junction to Case
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
GBJ
2500
VRRM
50
VRMS
35
VDC
50
IF(AV)
GBJ
2501
100
70
100
GBJ
2502
200
140
200
GBJ
2504
400
280
400
25
GBJ
2506
600
420
600
GBJ
2508
800
560
800
GBJ
2510
1000
700
1000
UNIT
V
V
V
A
IFSM
300
A
I²t
VF
IR
IR(H)
RθJC
TJ
TSTG
510
1.1
10
500
0.6
- 40 to + 150
- 40 to + 150
A²S
V
µA
µA
°C/W
°C
°C
Note :
1. Thermal resistance from junction to case per element. Unit mounted on 220 x 220 x 1.6mm aluminum plate heat sink.
Page 1 of 2
Rev. 03 : September 9, 2005