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| FT2000AA Datasheet, PDF (1/2 Pages) Diotec Semiconductor – Superfast Silicon Rectifiers - Single Diode / Two Polarities | |||
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TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
FT2000AA ~FT2000KG
PRV : 50 ~ 400 Volts
Io : 20 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Epoxy, Molded
* Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
* Mounting Position: Any
* Weight : 2.24 grams (Approximately)
* Polarity: As marked , K
K (Standard) is p/n FT2000KA, FT2000KB, â¦, KG
A (Reverse) is p/n FT2000AA, FT2000AB, â¦, AG
FAST RECOVERY RECTIFIERS
TO-220AC
0.154(3.91)DIA.
0.148(3.74)
0.113(2.87)
0.103(2.62)
0.415(10.54)MAX. 0.055(1.39)
0.045(1.14)
0.145(3.68)
0.135(3.43)
0.635(16.13)
0.625(15.87)
12
0.350(8.89)
0.330(8.39)
0.160(4.06)
0.140(3.56)
0.185(4.70)
0.175(4.44)
0.603(15.32)
0.573(14.55)
0.560(14.22)
0.530(13.46)
0.205(520)
0.195(4.95)
A
PIN 1
PIN 2
0.037(0.94)
0.027(0.68)
CASE
PIN 1
PIN 2
0.022(0.56)
0.014(0.36)
K
CASE
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Surge Peak Reverse Voltage
Maximum Average Forward Current, R-load, TC = 100 °C
Maximum Peak Rectified Forward Current, f > 15 Hz (Note 1)
Maximum Peak Forward Surge Current, 50 Hz half sine wave
60 Hz half sine wave
Maximum Forward Voltage
IF = 5 A, Tj = 25°C
IF = 20 A, Tj = 25°C
Maximum Reverse Current, VR = VRRM, Tj = 25 °C
Maximum Reverse Recovery Time, (IF = 0.5A, IR = 1A ; Irr = 0.25 A)
Maximum Thermal Resistance, Junction to Case
Junction Temperature Range, at reduced reverse voltage, V R ⤠80% VRRM
VR ⤠20% VRRM
in DC forward mode
Storage Temperature Range
FT2000KA FT2000KB FT2000KD FT2000KG
SYMBOL
UNIT
FT2000AA FT2000AB FT2000AD FT2000AG
VRRM
50
VRSM
50
IF(AV)
IFRM
100
200
400
V
100
200
400
V
20
A
80
A
375
IFSM
A
390
0.84
VF
V
0.96
IR
25
μA
Trr
200
ns
RÓ¨JC
1.5
K/W
- 50 to + 150
TJ
- 50 to + 200
°C
- 50 to + 200
TSTG
- 50 to + 175
°C
Note : (1) Max. temperature of the case TC = 100 °C.
Page 1 of 2
Rev. 00 : March 10, 2008
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