FBR5000_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY

FBR5000 - FBR5010
PRV : 50 - 1000 Volts
Io : 50 Amperes
FAST RECOVERY
BRIDGE RECTIFIERS
BR50
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) ^1.130(28.70)
0.618(15.70) ^1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55 °C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at IF = 25 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
FBR
5000
VRRM
50
VRMS
35
VDC
50
IF(AV)
FBR
5001
100
70
100
FBR
5002
200
140
200
FBR
5004
400
280
400
50
FBR
5006
600
420
600
FBR
5008
800
560
800
FBR
5010
1000
700
1000
UNIT
V
V
V
A
IFSM
I²t
VF
IR
IR(H)
Trr
RθJC
TJ
TSTG
400
A
664
A²S
1.3
V
10
µA
1.0
mA
200
300
500
ns
1
°C/W
- 50 to + 150
°C
- 50 to + 150
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005