FBR3500_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY

FBR3500 - FBR3510
PRV : 50 - 1000 Volts
Io : 35 Amperes
FAST RECOVERY
BRIDGE RECTIFIERS
BR50
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) ^1.130(28.70)
0.618(15.70) ^1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55 °C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at IF = 17.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL ^{FBR FBR FBR FBR FBR FBR FBR}
3500 3501 3502 3504 3506 3508 3510
VRRM 50 100 200 400 600 800 1000
VRMS 35 70 140 280 420 560 700
VDC
50 100 200 400 600 800 1000
IF(AV)
35
UNIT
V
V
V
A
IFSM
400
A
I²t
VF
IR
IR(H)
Trr
RθJC
TJ
TSTG
660
A²S
1.3
V
10
µA
200
µA
150
250
500
ns
10
°C/W
- 50 to + 150
°C
- 50 to + 150
°C
Notes :
1 ) Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A
2 ) Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
Page 1 of 2
Rev. 02 : March 24, 2005