FBR3500 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY BRIDGE RECTIFIERS

FBR3500 - FBR3510
PRV : 50 - 1000 Volts
Io : 35 Amperes
FAST RECOVERY
BRIDGE RECTIFIERS
BR50
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) ^1.130(28.70)
0.618(15.70) ^1.120(28.40)
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ _0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
FBR FBR FBR FBR FBR FBR FBR
SYMBOL _{3500 3501 3502 3504 3506 3508 3510} UNIT
VRRM 50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS
35 70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC
50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 55 °C
I F(AV)
35
Amps.
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
I FSM
Current Squared Time at t < 8.3 ms.
I²t
400
Amps.
660
A²S
Maximum Forward Voltage drop per Diode at IF = 17.5 Amps. VF
1.3
Volts
Maximum DC Reverse Current
Ta = 25 °C
IR
10
µA
at Rated DC Blocking Voltage
Ta = 100 °C
I R(H)
200
µA
Maximum Reverse Recovery Time (Note 1)
Trr
150
250
500
ns
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range
R^θJC
TJ
10
- 50 to + 150
°C/W
°C
Storage Temperature Range
TSTG
- 50 to + 150
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal Resistance from junction to case with units mounted on a 7.5" x 3.5" x 4.6" (19cm.x 9cm.x 11.8cm.) Al.-Finned Plate
UPDATE : APRIL 21, 1998