FBR2500_05 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY

FBR2500 - FBR2510
PRV : 50 - 1000 Volts
Io : 25 Amperes
FAST RECOVERY
BRIDGE RECTIFIERS
BR50
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70) ^1.130(28.70)
0.618(15.70) ^1.120(28.40)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.310(7.87)
0.280(7.11)
0.210(5.30)
0.200(5.10)
0.252(6.40)
0.248(6.30)
φ 0.100(2.50)
0.090(2.30)
0.905(23.0)
0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55 °C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at IF = 12.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL ^{FBR FBR FBR FBR FBR FBR FBR} UNIT
2500 2501 2502 2504 2506 2508 2510
VRRM 50 100 200 400 600 800 1000 V
VRMS 35 70 140 280 420 560 700 V
VDC
50 100 200 400 600 800 1000 V
IF(AV)
25
A
IFSM
300
A
I²t
VF
IR
IR(H)
Trr
RθJC
TJ
TSTG
375
1.3
10
200
150
250
1.45
- 50 to + 150
- 50 to + 150
A²S
V
µA
µA
500
ns
°C/W
°C
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal Resistance from junction to case with units mounted on a 5" x 6" x 4.9" (12.8cm.x 15.2cm.x 12.4cm.) Al.-Finned Plate.
Page 1 of 2
Rev. 02 : March 24, 2005