FBR1500W Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY BRIDGE RECTIFIERS

FBR1500W - FBR1510W
PRV : 50 - 1000 Volts
Io : 15 Amperes
FAST RECOVERY
BRIDGE RECTIFIERS
BR50W
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Ideal for printed circuit board
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight : 15.95 grams
0.732 (18.6)
0.692 (17.5)
1.130 (28.7)
1.120 (28.4)
0.470 (11.9)
0.430 (10.9)
0.21 (5.3)
0.20 (5.1)
0.042 (1.06)
0.038 (0.96)
0.310 (7.87)
0.280(7.11)
1.2 (30.5)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55 °C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage drop per Diode at IF = 7.5 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance per diode (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
FBR
1500W
VRRM
50
VRMS
35
VDC
50
IF(AV)
FBR
1501W
100
70
100
FBR
1502W
200
140
200
FBR
1504W
400
280
400
15
FBR
1506W
600
420
600
FBR
1508W
800
560
800
FBR
1510W
UNIT
1000 V
700 V
1000 V
A
IFSM
300
A
I²t
VF
IR
IR(H)
Trr
RθJC
TJ
TSTG
375
1.3
10
200
150
250
1.9
- 50 to + 150
- 50 to + 150
A²S
V
µA
µA
500
ns
°C/W
°C
°C
Notes :
1 ) Measured with IF = 0.5 Amp., IR = 1 Amp., Irr = 0.25 Amp.
2 ) Thermal Resistance from junction to case with units mounted on a 3.2" x 3.2" x 0.12" THK (8.2cm.x 8.2cm.x 0.3cm.) Al. Plate. heatsink.
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Rev. 02 : March 24, 2005