ERA34-10 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST RECOVERY DIODE

ERA34-10
PRV : 1000 Volts
Io : 0.1 Ampere
FAST RECOVERY DIODE
DO - 41
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.34 gram
0.107 (2.7)
0.080 (2.0)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum DCBlocking Voltage
Maximum Average Forward Current , Ta = 60 °C
Maximum Peak Forward Surge Current
( Sine wave, 10 ms )
Maximum Forward Voltage at I F = 0.1 A
Maximum Reverse Current at VRRM
Maximum Reverse Recovery Time ( Note 1 )
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VDC
IF(AV)
IFSM
VF
IRRM
Trr
TJ
TSTG
VALUE
1000
800
0.1
2
3.0
50
0.15
- 40 to + 140
- 40 to + 140
UNIT
V
V
A
A
V
μA
μs
°C
°C
Note:
( 1 ) Reverse Recovery Test Conditions :FI = 100 mA, IR = 100 mA.
Page 1 of 2
Rev. 02 : March 30, 2005