D5SBA10 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIERS

D5SBA10 ~ D5SBA60 SILICON BRIDGE RECTIFIERS
PRV : 100 ~ 600 Volts
Io : 6 Amperes
RBV25
3.9 ± 0.2
C3
30 ± 0.3
4.9 ± 0.2
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
∅ 3.2 ± 0.1
+ ~~
1.0 ± 0.1
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 7.7 grams
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.0 ± 0.2
0.7 ± 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
RATING
SYMBOL D5SBA10 D5SBA20 D5SBA40 D5SBA60 UNIT
Maximum Reverse Voltage
Maximum Average Forward Current
(50Hz Sine wave, R-load)
Maximum Peak Forward Surge Current, Tj = 25°C
(50Hz sine wave, Non-repetitive 1 cycle peak value)
Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°C
Maximum Forward Voltage per Diode at IF = 3.0 A
Maximum DC Reverse Current, VR=VRM
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case
Maximum Thermal Resistance, Junction to Ambient
Operating Junction Temperature
Storage Temperature Range
VRM
IF(AV)
IFSM
I²t
VF
IR
RθJC
RθJA
TJ
TSTG
100
200
400
600
6 (With heatsink, Tc = 110°C)
2.8 (Without heatsink, Ta = 25°C)
120
60
1.05
10
3.4 (With heatsink)
26 (Without heatsink)
150
- 40 to + 150
V
A
A
A²S
V
µA
°C/W
°C/W
°C
°C
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Rev. 02 : March 25, 2005