D3SBA10 Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – SILICON BRIDGE RECTIFIER

D3SBA10 ~ D3SBA80
SILICON BRIDGE RECTIFIER
PRV : 100 ~ 800 Volts
Io : 4.0 Amperes
0.150 (3.8)
C3
0.996 (25.3)
0.134 (3.4)
0.189 (4.8)
0.972 (24.7)
0.173 (4.4)
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight : 4.28 grams
+_{~ ~}
0.303 (7.7)
0.287 (7.3)
0.043 (1.1)
0.035 (0.9)
0.032 (0.8)
0.043 (1.1)
0.075 (1.9)
0.060 (1.5)
0.114 (2.9)
0.098 (2.5)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Reverse Voltage
Maximum Average Forward Current
(50Hz Sine wave, R-load)
Maximum Peak Forward Surge Current
( 50 Hz, Half-cycle, Sinwave, Single Shot )
Current Squared Time at 1ms ≤ t < 10 ms, Tc=25°C
Maximum Forward Voltage per Diode at I F = 2.0 A.
Maximum DC Reverse Current, VR=VRM
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case
Maximum Thermal Resistance, Junction to Ambient
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
D3SBA D3SBA D3SBA D3SBA D3SBA
10
20
40
60
80
VRM
100
200
400
600
800
IF(AV)
4 (With heatsink, Tc = 108°C)
2.3 (Without heatsink, Ta = 25°C)
UNIT
V
A
IFSM
80
A
I²t
32
A²S
VF
1.05
V
IR
10
µA
RθJC
RθJA
TJ
TSTG
5.5 (With heatsink)
30 (Without heatsink)
150
- 40 to + 150
°C/W
°C/W
°C
°C
Page 1 of 2
Rev. 02 : March 25, 2005