CN8A Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – CELL RECTIFIER DIODES

CN8A - CN8M
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Chip form
MECHANICAL DATA :
* Case : C8A
* Terminals : Solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Cathode to bigger size slug, For
Anode to bigger size slug use "R" suffix.
* Mounting position : Any
* Weight : 0.25 gram
CELL RECTIFIER DIODES
C8A
5.47
4.82
Anode
1.40
Cathode
0.51
0.38
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 75°C
Peak Forward Surge Current Single half sine wave
superimposed on rated load (JEDEC Method)
Maximum Forward Voltage at IF = 8 Amps.
Maximum DC Reverse Current Ta = 25 °C
at rated DC Blocking Voltage Ta = 100 °C
Typical Junction Capacitance (Note 1)
Thermal Resistance, Junction to Case
Junction Temperature Range
Storage Temperature Range
SYMBOL CN8A CN8B CN8D CN8G CN8J CN8K CN8M UNIT
VRRM
VRMS
VDC
IF(AV)
50 100 200 400 600 800 1000 Volts
35 70 140 280 420 560 700 Volts
50 100 200 400 600 800 1000 Volts
8.0
Amps.
IFSM
VF
IR
IR(H)
CJ
RθJC
TJ
TSTG
300
1.1
5.0
1.0
300
10
- 65 to + 175
- 65 to + 175
Amps.
Volts
µA
mA
pF
°C/W
°C
°C
Note : (1) Measured at 1.0 MHz and applied reverse Voltage of 4.0 VDC
UPDATE : APRIL 23, 1998