CN25A Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – CELL RECTIFIER DIODES

CN25A - CN25M
PRV : 50 - 1000 Volts
Io : 25 Amperes
CELL RECTIFIER DIODES
C25A
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Chip form
6.20
5.47
ANODE
1.45
CATHODE
0.51
0.38
MECHANICAL DATA :
* Case : C25A
* Terminals : Solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Cathode to bigger size slug, For
Anode to bigger size slug use "R" suffix.
* Mounting position : Any
* Weight : 0.31 gram
Dimensions in millimeter
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
SYMBOL CN25A CN25B CN25D CN25G CN25J CN25K CN25M UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
50 100 200 400 600 800 1000 Volts
Maximum RMS Voltage
VRMS
35
70 140 280 420 560 700 Volts
Maximum DC Blocking Voltage
VDC
50 100 200 400 600 800 1000 Volts
Maximum Average Forward Current Tc = 75°C
IF(AV)
25
Amps
Peak Forward Surge Current Single half sine wave
superimposed on rated load (JEDEC Method)
IFSM
400
Amps
Maximum Forward Voltage at IF = 25 Amps.
VF
1.1
Volts
Maximum DC Reverse Current Ta = 25 °C
IR
5.0
µA
at rated DC Blocking Voltage Ta = 100 °C
IR(H)
1.0
mA
Typical Junction Capacitance (Note 1)
CJ
300
pF
Thermal Resistance, Junction to Case
RθJC
10
°C/W
Junction Temperature Range
TJ
- 65 to + 175
°C
Storage Temperature Range
TSTG
- 65 to + 175
°C
Note : (1) Measured at 1.0 MHz and applied reverse Voltage of 4.0 VDC
UPDATE : APRIL 23, 1998