BYX134PL Datasheet, PDF (1/1 Pages) EIC discrete Semiconductors – HIGH VOLTAGE AVALANCHE DIODE

BYX134PL
HIGH VOLTAGE AVALANCHE DIODE
PRV : 4000 Volts
Io : 50mA
FEATURES :
* High maximum operating temperature
* Excellent stability
* High reliability
* Low reverse current
* Pb / RoHS Free
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
D2
0.161 (4.10)
0.154 (3.90)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.284 (7.21)
0.268 (6.81)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 50 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Working Reverse Voltage
Min. Avalanche Breakdown Voltage at 100 µA, Tj = 25°C
Max. Avalanche Breakdown Voltage at 100 µA, Tj = 25°C
Maximum Average Forward Current
Maximum Repetitive Peak Forward Current
Maximum Non-Repetitive Peak Reverse Current
( t = 100 µs triangular pulse; Tj(max) prior to surge)
Forward Voltage at
IF = 10 mA, Tj = 25°C
Maximum Reverse Current
VR = VRWMmax.; Tj = 25°C
VR = VRWMmax.; Tj = 175°C
Thermal Resistance From Junction to Ambient
(Ta=TL; Lead Length=10mm)
Maximum Junction Temperature
Storage Temperature Range
SYMBOL
V RRM
V RW M
VBR(min.)
VBR(max.)
I F(AV)
I FRM
IRSM
VF(Min)
VF(Max.)
IR
IR(H)
Rth j-a
Tj
T STG
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VALUE
4000
4000
5500
7500
50
500
50
5.0
7.0
1.0
30
90
175
- 55 to + 175
UNIT
V
V
V
V
mA
mA
mA
V
V
µA
µA
K/W
°C
°C
Rev. 02 : March 25, 2005