BYX134GPL Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – HIGH VOLTAGE AUTOMOTIVE IGNITION DIODE

Certificate TH97/10561QM
Certificate TW00/17276EM
BYX134GPL
PRV : 4000 V
Io : 50 mA
HIGH VOLTAGE
AUTOMOTIVE IGNITION DIODE
DO - 41
FEATURES :
* Glass passivated junction chip
* Excellent stability
* Low leakage current
* High maximum operating temperature
* Guaranteed avalanche energy absorption capability.
* Ideal for car ignition systems and automotive
applications with extreme temperature requirements.
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.335 gram
0.108 (2.74)
0.078 (1.99)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
0.205 (5.20)
0.161 (4.10)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 50 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Working Reverse Voltage
Min. Avalanche Breakdown Voltage at 100 μA, Tj = 25 °C
Max. Avalanche Breakdown Voltage at 100 μA, Tj = 25 °C
Maximum Average Forward Current
Maximum Repetitive Peak Forward Current
Maximum Non-Repetitive Peak Reverse Current
( t = 100 μs triangular pulse; Tj(max) prior to surge )
Forward Voltage at
I_F = 10 mA, Tj = 25 °C
Maximum Reverse Current at V_R = V_RWMmax. : Tj = 25 °C
V_R = V_RWMmax. : Tj = 175 °C
Thermal Resistance From Junction to Ambient
( Ta = TL ; Lead Length = 10 mm )
Maximum Junction Temperature
Storage Temperature Range
SYMBOL
V_RRM
V_RWM
V_BR(min.)
V_BR(max.)
I_F(AV)
I_FRM
I_RSM
V_F(Min)
V_F(Max)
I_R
I_R(H)
Rth j-a
Tj
T_STG
VALUE
4000
4000
5500
7500
50
500
50
5.0
7.0
1.0
30
90
175
- 65 to + 175
UNIT
V
V
V
V
mA
mA
mA
V
V
μA
μA
K/W
°C
°C
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Rev. 03 : October 31, 2007