BYV95A Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – AVALANCHE FAST RECOVERY RECTIFIER DIODES

BYV95A - BYV96E
PRV : 200 - 1000 Volts
Io : 1.5 Amperes
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
AVALANCHE FAST RECOVERY
RECTIFIER DIODES
D2
0.161 (4.10)
0.154 (3.90)
1.00 (25.4)
MIN.
0.284 (7.21)
0.268 (6.81)
MECHANICAL DATA :
* Case : D2 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.465 gram
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 50 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Min. Avalanche Breakdown Voltage @ 100 µA
Maximum Average Forward Rectified Current
Lead Length 10 mm. ; Ttp = 65 °C
Peak Forward Surge Current single half sine wave
superimposed on rated load
Maximum Forward Voltage at IF = 3.0 Amps.
Maximum DC Reverse Current
TJ = 25 °C
at Rated DC Blocking Voltage
TJ = 165 °C
Maximum Reverse Recovery Time ( Note 1 )
Typical Thermal Resistance (Note 2)
Junction Temperature Range
Storage Temperature Range
SYMBOL BYV95A BYV95B BYV95C BYV96D BYV96E UNITS
VRRM
200
400
600
800 1000 Volts
VRMS
140
280
420
560
700 Volts
VDC
200
400
600
800 1000 Volts
VBR(min. )
300
500
700
900 1100 Volts
I F(AV)
1.5
Amps.
IFSM
VF
IR
Trr
RθJA
TJ
TSTG
35
1.6
5.0
150
150
200
50
175
- 65 to + 175
Amps.
Volts
µA
ns
°_C/W
°C
°C
Notes :
(1) Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A
(2) Thermal resistance from Junction to Ambient at 0.375" (9.5mm) Lead Lengths, P.C. Board Mounted.
UPDATE : AUGUST 3, 1998