BYG24D Datasheet, PDF (1/2 Pages) EIC discrete Semiconductors – FAST AVALANCHE RECTIFIERS

TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
BYG24D - BYG24J
PRV : 200 - 600 Volts
Io : 1.5 Amperes
FAST AVALANCHE
RECTIFIERS
SMA
FEATURES :
* Glass passivated junction
* Low profile package
* Ideal for automated placement
* Low reverse current
* Soft recovery characteristics
* Fast reverse recovery time
* Pb / RoHS Free
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.060 gram (Approximately)
1.3 ± 0.2
1.6 ± 0.25
2.6 ± 0.15
2.3 ± 0.2
1.6 ± 0.25
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise note.d
RATING
Maximum Repetitive Peak Reverse Voltage
Minimum Breakdown Voltage at I_R = 100 μA
Maximum Average Forward Current
Peak Forward Surge Current 10 ms single half
sine wave superimposed on rated load
Maximum Instantaneous
at I_F = 1 A, Tj = 25 °C
Forward Voltage ⁽¹⁾
at I_F = 1.5 A, Tj = 25 °C
Maximum DC Reverse Current
at V_R = V_RRM, Tj = 25 °C
at V_R = V_RRM, Tj = 100 °C
Maximum Reverse Recovery Time( I_F = 0.5A, I_R = 1.0A, Irr = 0.25A)
Typical Thermal Resistance, Junction to Case
Maximum Thermal Resistance, Junction to Ambient ⁽²⁾
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I_(BR)R = 1A, Tj = 25 °C
Operating Junction and Storage Temperature Range
SYMBOL
V_RRM
V_(BR)
I_F(AV)
BYG24D
200
200
BYG24G
400
400
1.5
BYG24J
600
600
UNIT
V
V
A
I_FSM
30
A
V_F
I_R
I_R(H)
Trr
R_Ó¨JC
R_Ó¨JA
1.15
V
1.25
1.0
μA
10
140
ns
25
°C/W
150
°C/W
E_R
20
mJ
T_J, T_STG
- 55 to + 150
°C
Notes :
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Mounted on epoxy-glass hard tissue 35 µm * 17 mm² cooper area per electrode.
Page 1 of 2
Rev. 01 : September 18, 2008