BYD77AA Datasheet, PDF (1/3 Pages) EIC discrete Semiconductors – ULTRA FAST LOW-LOSS CONTROLLED AVALANCHE RECTIFIERS

TH97/10561QM
TW00/17276EM
IATF 0060636
SGS TH07/1033
BYD77AA - BYD77GA
ULTRA FAST LOW-LOSS
CONTROLLED AVALANCHE RECTIFIERS
PRV : 50 - 400 Volts
Io : 2.0 Amperes
FEATURES :
* Glass passivated junction chip
* High maximum operating temperature
* Low leakage current
* Excellent stability
* Smallest surface mount rectifier outline
* Pb / RoHS Free
SMA (DO-214AC)
1.1 ± 0.3
1.2 ± 0.2
2.6 ± 0.15
2.1 ± 0.2
0.2 ± 0.07
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
2.0 ± 0.2
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Continuous Reverse Voltage
Min. Reverse Avalanche Breakdown Voltage @ I_R = 0.1 mA
Maximum Average Forward Current
Maximum Non-Repetitive Peak Forward Surge Current (Note 3)
Maximum Repetitive Peak Forward Current at Ttp = 105 °C
Maximum Forward Voltage at I_F = 1.0 A ; T_J = 25 °C
Maximum Reverse Current at V_R =V_RRMmax
T_J = 25 °C
T_J = 165 °C
Maximum Reverse Recovery Time (Note 4)
Thermal Resistance from Junction to Tie-Point
Thermal Resistance from Junction to Ambient (Note 5)
Junction Temperature Range
Storage Temperature Range
SYMBOL ^{BYD BYD BYD BYD BYD BYD BYD} UNIT
77AA 77BA 77CA 77DA 77EA 77FA 77GA
V_RRM 50 100 150 200 250 300 400 V
V_R
50 100 150 200 250 300 400 V
V_(BR)R-min 55 110 165 220 275 330 440 V
I_F(AV)
2.0 ⁽¹⁾
0.85⁽²⁾
1.85 ⁽¹⁾
A
0.80 ⁽²⁾
I_FSM
25
A
I_FRM
15
13
A
V_F
0.98
1.05
V
I_R
1.0
μA
I_R(H)
100
μA
Trr
25
50
ns
Rth j-tp
30
K/W
Rth j-a
150
K/W
T_J
T_STG
- 65 to + 175
°C
- 65 to + 175
°C
Notes :
(1) Ttp = 105 °C; see Fig. 1and 2; averaged over any 20 ms period; see also Fig.5 and 6
(2) Tamb = 60 °C; PCB mounting ; see Fig. 3 and 4; averaged over any 20 ms period; see also Fig.5 and 6
(3) t=10ms half sine wave; Tj = Tjmax prior to surge; V_R = V_RRMmax
(4) Reverse Recovery Test Conditions : I_F = 0.5 A, I_R = 1.0 A, Irr = 0.25 A.
(5) Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≤ 40 μm.
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Rev. 00 : February 13, 2008